Nitride Semiconductors And Devices - 6 Angebote vergleichen

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A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim al. [3] in 1959 employed the same technique to produce small cry meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.

Von Händler/Antiquariat, Minerva KG [3059414], Darmstadt, ., Germany.
Zustand: Gut, XXIV, 492 pp. 271 figs., 23 tabs. About this book: This is a unique book devoted to the important class of nitride semiconductors and devices. Numerous tables and figures detailing properties and performance devices are compiled. Structural, electrical and optical properties of nitrides and substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies (contacts), dopant incorporation and analyses, pn-junctions, light-emitting diodes, and blue lasers are treated succinctly. Attention is paid to both technological issues and fundamentals. Written for scientists and graduate students ISBN 354064038X Sprache: en.

Lieferung aus: Deutschland, Versandart: STD, Versand nach: DE.
Von Händler/Antiquariat, Minerva KG, [716].
Zustand: Gut, XXIV, 492 pp. 271 figs., 23 tabs. About this book: This is a unique book devoted to the important class of nitride semiconductors and devices. Numerous tables and figures detailing properties and performance devices are compiled. Structural, electrical and optical properties of nitrides and substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies (contacts), dopant incorporation and analyses, pn-junctions, light-emitting diodes, and blue lasers are treated succinctly. Attention is paid to both technological issues and fundamentals. Written for scientists and graduate students ISBN 354064038X, Gebunden.

Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, The Book Depository EURO [60485773], Slough, United Kingdom.
Language: English Brand New Book ***** Print on Demand *****.This is a unique book devoted to the important class of nitride semiconductors and devices. Numerous tables and figures detailing properties and performance devices are compiled. Structural, electrical and optical properties of nitrides and substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies (contacts), dopant incorporation and analyses, pn-junctions, light-emitting diodes, and blue lasers are treated succinctly. Attention is paid to both technological issues and fundamentals.

Von Händler/Antiquariat, Textbooks Den [59161808], Oakland, CA, U.S.A.
354064038X New Book. Please allow 4-14 business days to arrive. We will ship Internationally as well. Very Good Customer Service is Guaranteed!! Millions sold offline.

Von Händler/Antiquariat, Delhi Book Store [52238351], new delhi, Del, India.