Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering)
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Doping in III-V Semiconductors (1993)
EN HC US
ISBN: 9780521419192 bzw. 0521419190, in Englisch, Cambridge University Press, gebundenes Buch, gebraucht.
Von Händler/Antiquariat, Anybook Ltd. [312675], Lincoln, United Kingdom.
This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition.
This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition.
2
Doping in III-V Semiconductors (1993)
EN HC NW
ISBN: 9780521419192 bzw. 0521419190, in Englisch, Cambridge University Press, gebundenes Buch, neu.
Lieferung aus: Niederlande, Vermoedelijk 4-6 weken.
bol.com.
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dop... This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.Soort: Met illustraties;Taal: Engels;Oorspronkelijke titel: Doping in III-V Semiconductors;Afmetingen: 40x228x152 mm;Gewicht: 1,09 kg;Verschijningsdatum: september 1993;ISBN10: 0521419190;ISBN13: 9780521419192; Engelstalig | Hardcover | 1993.
bol.com.
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dop... This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.Soort: Met illustraties;Taal: Engels;Oorspronkelijke titel: Doping in III-V Semiconductors;Afmetingen: 40x228x152 mm;Gewicht: 1,09 kg;Verschijningsdatum: september 1993;ISBN10: 0521419190;ISBN13: 9780521419192; Engelstalig | Hardcover | 1993.
3
Symbolbild
Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) (1993)
EN US
ISBN: 9780521419192 bzw. 0521419190, in Englisch, Cambridge University Press, gebraucht.
Von Händler/Antiquariat, Nearfine Books [3030508], Brooklyn, NY, U.S.A.
Gently used. Expect delivery in 2-3 weeks.
Gently used. Expect delivery in 2-3 weeks.
4
Doping in III-V Semiconductors
EN HC NW
ISBN: 9780521419192 bzw. 0521419190, in Englisch, Cambridge University Press, gebundenes Buch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
Doping-in-III-V-Semiconductors~~E-F-Schubert, Doping in III-V Semiconductors, Hardcover.
Doping-in-III-V-Semiconductors~~E-F-Schubert, Doping in III-V Semiconductors, Hardcover.
5
Symbolbild
Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) (1993)
EN HC NW
ISBN: 9780521419192 bzw. 0521419190, in Englisch, Cambridge University Press, gebundenes Buch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, Versandkostenfrei.
Von Händler/Antiquariat, Irish Booksellers [57531671], Rumford, ME, U.S.A.
Von Händler/Antiquariat, Irish Booksellers [57531671], Rumford, ME, U.S.A.
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