Instabilities in Metal-oxide Semiconductor Devices (Electrocomponent Science Monographs)
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Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Versandkosten nach: USA.
Von Händler/Antiquariat, Anybook Ltd.
Routledge, 1981. Volume 1. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In fair condition, suitable as a study copy. No dust jacket.

Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 1-2 business days.
Von Händler/Antiquariat, Cheap_Books_Fast.
This series of review monographs is aimed at bridging the gap between electronic engineer and physicists, and each title should be of relevance and interest to either. The first monograph is concerned with the factors that cause MOS devices to vary from the results predicted by first-order theory; in particular, drifts caused by variation of temperature, voltage, radiation, and other stresses. It is intended as an introductory text for undergraduate and graduate students of solid-state physics or electronics, and as a concise review for semiconductor-processing, reliability, and quality-assurance engineers. Contents include chapters on: Investigative Techniques. Surface States. Mobile Ions. Dipolar Polarization. Hole Trapping. Electron Trapping. Conduction Problems and Dielectric Breakdown. Hardcover, Label: Routledge, Routledge, Produktgruppe: Book, Publiziert: 1981-01-01, Studio: Routledge, Verkaufsrang: 6086103.

Lieferung aus: Vereinigte Staaten von Amerika, zzgl. Versandkosten, Verandgebiet: DOM.
Von Händler/Antiquariat, booklab, VA, Chantilly, [RE:4].
Great customer service. You will be happy! Hardcover.

Lieferung aus: Vereinigte Staaten von Amerika, zzgl. Versandkosten, Verandgebiet: DOM.
Von Händler/Antiquariat, More Books, FL, MIAMI, [RE:3].
Hardcover.

Lieferung aus: Vereinigte Staaten von Amerika, zzgl. Versandkosten, Verandgebiet: DOM.
Von Händler/Antiquariat, Books Express, NH, Portsmouth, [RE:4].
Hardcover.