Materials Science Applications of Ion Beam Techniques
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Bester Preis: € 158,70 (vom 01.12.2021)1
Materials Science Applications of Ion Beam Techniques
EN NW EB DLISBN: 9783035705201 bzw. 3035705208, in Englisch, neu, E-Book, elektronischer Download.
Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.
The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.
2
Materials Science Applications of Ion Beam Techniques
EN NW EB DLISBN: 9783035705201 bzw. 3035705208, in Englisch, neu, E-Book, elektronischer Download.
Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
The first particle accelerators were built in the early 1930'S. For a long time, these devices were used exclusively by nuclear physicists. In the 1960's, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.
The first particle accelerators were built in the early 1930'S. For a long time, these devices were used exclusively by nuclear physicists. In the 1960's, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.
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