Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors als von
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9783330319165 - Ajay Gahlot: Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors
Ajay Gahlot

Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors (2017)

Lieferung erfolgt aus/von: Deutschland DE PB NW

ISBN: 9783330319165 bzw. 333031916X, in Deutsch, 104 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.

Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Sparbuchladen, [3602074].
Neuware - In this book, some fundamental issues regarding the limitation of ultra thin silicon dioxide as gate dielectric are discussed. The scaling limit of silicondioxide and high leakage currents, indicate a need for an alternate gate dielectric to meet the industries demand for greater integrated circuit functionality and performance at lower cost. Alumina fulfills many of the requirements of a high K dielectric for MOS applications. The present book explains the result of growing high quality alumina films on silicon substrate by PLD (pulse laser deposition) to improve the leakage current and breakdown strength. -, 13.06.2017, Taschenbuch, Neuware, 220x150x6 mm, 171g, 104, Internationaler Versand, offene Rechnung (Vorkasse vorbehalten), Selbstabholung und Barzahlung, PayPal, Banküberweisung.
2
9783330319165 - Gahlot, Ajay: Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors
Gahlot, Ajay

Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors (2017)

Lieferung erfolgt aus/von: Deutschland DE PB NW

ISBN: 9783330319165 bzw. 333031916X, in Deutsch, 104 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.

Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
In this book, some fundamental issues regarding the limitation of ultra thin silicon dioxide as gate dielectric are discussed. The scaling limit of silicondioxide and high leakage currents, indicate a need for an alternate gate dielectric to meet the industries demand for greater integrated circuit functionality and performance at lower cost. Alumina fulfills many of the requirements of a high K dielectric for MOS applications. The present book explains the result of growing high quality alumina films on silicon substrate by PLD (pulse laser deposition) to improve the leakage current and breakdown strength. 2017, Taschenbuch / Paperback, Neuware, H: 220mm, B: 150mm, 104, Internationaler Versand, Selbstabholung und Barzahlung, PayPal, offene Rechnung, Banküberweisung.
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9783330319165 - Gahlot, Ajay: Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors
Symbolbild
Gahlot, Ajay

Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors

Lieferung erfolgt aus/von: Deutschland DE PB NW

ISBN: 9783330319165 bzw. 333031916X, in Deutsch, Taschenbuch, neu.

Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, European-Media-Service Mannheim [1048135], Mannheim, Germany.
Publisher/Verlag: LAP Lambert Academic Publishing | In this book, some fundamental issues regarding the limitation of ultra thin silicon dioxide as gate dielectric are discussed. The scaling limit of silicondioxide and high leakage currents, indicate a need for an alternate gate dielectric to meet the industries demand for greater integrated circuit functionality and performance at lower cost. Alumina fulfills many of the requirements of a high K dielectric for MOS applications. The present book explains the result of growing high quality alumina films on silicon substrate by PLD (pulse laser deposition) to improve the leakage current and breakdown strength. | Format: Paperback | Language/Sprache: english | 104 pp.
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9783330319165 - Ajay Gahlot: Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors
Ajay Gahlot

Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors (2017)

Lieferung erfolgt aus/von: Deutschland DE PB NW

ISBN: 9783330319165 bzw. 333031916X, in Deutsch, 104 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.

Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Buchhandlung Hoffmann, [3174608].
Neuware - In this book, some fundamental issues regarding the limitation of ultra thin silicon dioxide as gate dielectric are discussed. The scaling limit of silicondioxide and high leakage currents, indicate a need for an alternate gate dielectric to meet the industries demand for greater integrated circuit functionality and performance at lower cost. Alumina fulfills many of the requirements of a high K dielectric for MOS applications. The present book explains the result of growing high quality alumina films on silicon substrate by PLD (pulse laser deposition) to improve the leakage current and breakdown strength. 13.06.2017, Taschenbuch, Neuware, 220x150x6 mm, 171g, 104, Internationaler Versand, offene Rechnung (Vorkasse vorbehalten), sofortueberweisung.de, Selbstabholung und Barzahlung, Skrill/Moneybookers, PayPal, Lastschrift, Banküberweisung.
5
9783330319165 - Ajay Gahlot: Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors
Ajay Gahlot

Alumina (Al2O3) as Alternate Gate Dielectric in MOS Capacitors (2017)

Lieferung erfolgt aus/von: Deutschland EN PB NW

ISBN: 9783330319165 bzw. 333031916X, in Englisch, 104 Seiten, LAP LAMBERT Academic Publishing, Taschenbuch, neu.

Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei.
Von Händler/Antiquariat, dodax-shop-eu.
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