Nanometer-Scale Resistivity of Copper Films and Interconnects: Simulation and Measurement of Nanometer-Scale Resistivity of Copper Films for Interconnect Applications
5 Angebote vergleichen
| Preise | 2013 | 2014 | 2015 | 2016 |
|---|---|---|---|---|
| Schnitt | € 48,07 | € 46,49 | € 45,65 | € 51,17 |
| Nachfrage |
1
Symbolbild
Nanometer-Scale Resistivity of Copper Films andInterconnects (2009)
DE PB NW RPISBN: 9783639167702 bzw. 3639167708, in Deutsch, VDM Verlag Jun 2009, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Titel. Neuware - A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper (size effect). The simulation program: 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) includes the effects of surface and grain-boundary scattering either separately or together, and 4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance and film thickness measurements. Good agreement between the experimental results with those of the simulation program was obtained when the measured mean grain sizes were used by the simulation program. 100 pp. Englisch.
This item is printed on demand - Print on Demand Titel. Neuware - A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper (size effect). The simulation program: 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) includes the effects of surface and grain-boundary scattering either separately or together, and 4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance and film thickness measurements. Good agreement between the experimental results with those of the simulation program was obtained when the measured mean grain sizes were used by the simulation program. 100 pp. Englisch.
2
Nanometer-Scale Resistivity of Copper Films and Interconnects: Simulation and Measurement of Nanometer-Scale Resistivity of Copper Films for Interconnect Applications (2009)
EN PB NWISBN: 9783639167702 bzw. 3639167708, in Englisch, 100 Seiten, VDM Verlag, Taschenbuch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 1-2 business days.
Von Händler/Antiquariat, Serendipity UnLtd.
A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper (size effect). The simulation program: 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs¿ theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) includes the effects of surface and grain-boundary scattering either separately or together, and 4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance and film thickness measurements. Good agreement between the experimental results with those of the simulation program was obtained when the measured mean grain sizes were used by the simulation program. Paperback, Label: VDM Verlag, VDM Verlag, Produktgruppe: Book, Publiziert: 2009-06-26, Studio: VDM Verlag.
Von Händler/Antiquariat, Serendipity UnLtd.
A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper (size effect). The simulation program: 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs¿ theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) includes the effects of surface and grain-boundary scattering either separately or together, and 4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance and film thickness measurements. Good agreement between the experimental results with those of the simulation program was obtained when the measured mean grain sizes were used by the simulation program. Paperback, Label: VDM Verlag, VDM Verlag, Produktgruppe: Book, Publiziert: 2009-06-26, Studio: VDM Verlag.
3
Nanometer-Scale Resistivity of Copper Films andInterconnects
DE PB NWISBN: 9783639167702 bzw. 3639167708, in Deutsch, Vdm Verlag Dr. Müller, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
buecher.de GmbH & Co. KG, [1].
A highly versatile simulation program is developedand used to examine how the resistivity of thin metal films andlines increases as their dimensions approach and become smaller than themean free path of electrons in metals such as copper (sizeeffect). The simulation program: 1) provides a more accuratecalculation of surface scattering effects than that obtained fromthe usual formulation of Fuchs' theory, 2) calculatesgrain-boundary effects that are consistent with the theory of Mayadas andShatzkes, 3) includes the effects of surface and grain-boundaryscattering either separately or together, and 4) simulates the effecton resistivity if a surface of a film or line has a different value forthe scattering parameter. The increase in resistivity withdecreasing thickness of thin, evaporated copper films (approximately 10 nm to150 nm thick) was determined from sheet resistance and filmthickness measurements. Good agreement between the experimentalresults with those of the simulation program was obtainedwhen the measured mean grain sizes were used by the simulationprogram.2009. 100 S. 220 mmVersandfertig in 3-5 Tagen, Softcover.
buecher.de GmbH & Co. KG, [1].
A highly versatile simulation program is developedand used to examine how the resistivity of thin metal films andlines increases as their dimensions approach and become smaller than themean free path of electrons in metals such as copper (sizeeffect). The simulation program: 1) provides a more accuratecalculation of surface scattering effects than that obtained fromthe usual formulation of Fuchs' theory, 2) calculatesgrain-boundary effects that are consistent with the theory of Mayadas andShatzkes, 3) includes the effects of surface and grain-boundaryscattering either separately or together, and 4) simulates the effecton resistivity if a surface of a film or line has a different value forthe scattering parameter. The increase in resistivity withdecreasing thickness of thin, evaporated copper films (approximately 10 nm to150 nm thick) was determined from sheet resistance and filmthickness measurements. Good agreement between the experimentalresults with those of the simulation program was obtainedwhen the measured mean grain sizes were used by the simulationprogram.2009. 100 S. 220 mmVersandfertig in 3-5 Tagen, Softcover.
4
Nanometer-Scale Resistivity of Copper Films and Interconnects: Simulation and Measurement of Nanometer-Scale Resistivity of Copper Films for Interconnect Applications (2009)
EN NWISBN: 9783639167702 bzw. 3639167708, in Englisch, 100 Seiten, VDM Verlag, neu.
Lieferung aus: Frankreich, Expédition sous 1 à 2 jours ouvrés.
Von Händler/Antiquariat, tousbouquins.
Broché, Label: VDM Verlag, VDM Verlag, Produktgruppe: Book, Publiziert: 2009-06-26, Studio: VDM Verlag.
Von Händler/Antiquariat, tousbouquins.
Broché, Label: VDM Verlag, VDM Verlag, Produktgruppe: Book, Publiziert: 2009-06-26, Studio: VDM Verlag.
5
Nanometer-Scale Resistivity of Copper Films and Interconnects: Simulation and Measurement of Nanometer-Scale Resistivity of Copper Films for Interconnect Applications (2009)
EN NWISBN: 9783639167702 bzw. 3639167708, in Englisch, 100 Seiten, VDM Verlag, neu.
Lieferung aus: Italien, Generalmente spedito in 24 ore.
Von Händler/Antiquariat, Amazon.it.
Copertina flessibile, Label: VDM Verlag, VDM Verlag, Produktgruppe: Libro, Publiziert: 2009-06-26, Studio: VDM Verlag.
Von Händler/Antiquariat, Amazon.it.
Copertina flessibile, Label: VDM Verlag, VDM Verlag, Produktgruppe: Libro, Publiziert: 2009-06-26, Studio: VDM Verlag.
Lade…