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100%: Mehta, Pourus: A Reckoner on the Development of Elementary Semiconductor Devices: Design, Fabrication & Characterization (ISBN: 9783659741159) 2015, LAP Lambert Academic Publishing, United States, in Englisch, Taschenbuch.Nur diese Ausgabe anzeigen…
39%: Mehta, Pourus: A Treatise on the Development of the Silicon Drift Detector (Paperback) (ISBN: 9783659644863) 2015, in Deutsch, Taschenbuch.Nur diese Ausgabe anzeigen…
A Reckoner on the Development of Elementary Semiconductor Devices: Design, Fabrication & Characterization
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| Preise | 2015 | 2019 | 2020 |
|---|---|---|---|
| Schnitt | € 36,25 | € 39,80 | € 38,18 |
| Nachfrage |
1
A Reckoner on the Development of Elementary Semiconductor Devices (Paperback) (2015)
~EN PB NWISBN: 9783659741159 bzw. 3659741159, vermutlich in Englisch, LAP Lambert Academic Publishing, United States, Taschenbuch, neu.
Von Händler/Antiquariat, The Book Depository EURO [60485773], London, United Kingdom.
Language: English. Brand new Book. This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (>1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor ( ), Barrier height ( Bp) and Saturation current density (Js).".
Language: English. Brand new Book. This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (>1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor ( ), Barrier height ( Bp) and Saturation current density (Js).".
2
A Reckoner on the Development of Elementary Semiconductor Devices : Design, Fabrication & Characterization (2015)
~EN PB NW RPISBN: 9783659741159 bzw. 3659741159, vermutlich in Englisch, LAP Lambert Academic Publishing Jul 2015, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor ( ), Barrier height ( Bp) and Saturation current density (Js). 80 pp. Englisch.
This item is printed on demand - Print on Demand Neuware - This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor ( ), Barrier height ( Bp) and Saturation current density (Js). 80 pp. Englisch.
3
A Reckoner on the Development of Elementary Semiconductor Devices (2015)
~EN NW RPISBN: 9783659741159 bzw. 3659741159, vermutlich in Englisch, LAP Lambert Academic Publishing, neu, Nachdruck.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Free shipping.
Von Händler/Antiquariat, Books2Anywhere [190245], Fairford, GLOS, United Kingdom.
New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Von Händler/Antiquariat, Books2Anywhere [190245], Fairford, GLOS, United Kingdom.
New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
4
A Reckoner on the Development of Elementary Semiconductor Devices
~EN NW ABISBN: 9783659741159 bzw. 3659741159, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Schweiz, Lieferzeit: 2 Tage, zzgl. Versandkosten.
This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor ( ), Barrier height ( Bp) and Saturation current density (Js).
This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor ( ), Barrier height ( Bp) and Saturation current density (Js).
5
A Reckoner on the Development of Elementary Semiconductor Devices - Design, Fabrication & Characterization (2015)
~EN PB NWISBN: 9783659741159 bzw. 3659741159, vermutlich in Englisch, 80 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Free shipping.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor ( ), Barrier height ( Bp) and Saturation current density (Js). 2015, Taschenbuch / Paperback, Neuware, H: 220mm, B: 150mm, 80, Internationaler Versand, Selbstabholung und Barzahlung, PayPal, Offene Rechnung, Banküberweisung.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor ( ), Barrier height ( Bp) and Saturation current density (Js). 2015, Taschenbuch / Paperback, Neuware, H: 220mm, B: 150mm, 80, Internationaler Versand, Selbstabholung und Barzahlung, PayPal, Offene Rechnung, Banküberweisung.
6
Symbolbild
A Treatise on the Development of the Silicon Drift Detector (2015)
DE PB NW RPISBN: 9783659644863 bzw. 3659644862, in Deutsch, LAP Lambert Academic Publishing Jan 2015, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
7
Symbolbild
A Treatise on the Development of the Silicon Drift Detector (Paperback) (2015)
DE PB NW RPISBN: 9783659644863 bzw. 3659644862, in Deutsch, Omniscriptum Gmbh Co. Kg, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, The Book Depository EURO [60485773], Gloucester, UK, United Kingdom.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, The Book Depository EURO [60485773], Gloucester, UK, United Kingdom.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
8
A Treatise on the Development of the Silicon Drift Detector
DE NWISBN: 9783659644863 bzw. 3659644862, in Deutsch, neu.
Lieferung aus: Deutschland, zzgl. Versandkosten.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
9
A Reckoner on the Development of Elementary Semiconductor Devices
~EN NWISBN: 3659741159 bzw. 9783659741159, vermutlich in Englisch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
10
A Treatise on the Development of the Silicon Drift Detector
DE NWISBN: 9783659644863 bzw. 3659644862, in Deutsch, OmniScriptum GmbH & Co. KG, OmniScriptum GmbH & Co. KG, OmniScriptum GmbH & Co. KG, neu.
Lieferung aus: Vereinigte Staaten von Amerika, zzgl. Versandkosten, Free Shipping on eligible orders over $25.
Mehta Pourus, Paperback, English-language edition, Pub by OmniScriptum GmbH & Co. KG.
Mehta Pourus, Paperback, English-language edition, Pub by OmniScriptum GmbH & Co. KG.
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