Quantum conductance staircase in silicon nanosandwiches
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Quantum conductance staircase in silicon nanosandwiches
DE PB NWISBN: 9783659819308 bzw. 3659819301, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Agrios-Buch [57449362], Bergisch Gladbach, Germany.
Neuware - We present the findings of the 0.7 (2e2/h) feature in the hole quantum conductance staircase that is caused by one-dimensional channels prepared by the split-gate method as well as by the gate voltage applied to the edge channels inside the silicon nanosandwich structure. The interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction (SOI) is shown to result in the formation of the 0.7 (2e2/h) feature that is found to take in the fractional form with both the plateaux and steps as a function of the magnetic field and the gate voltage. The creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels appears to reveal new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of the p-type silicon nanosandwiches because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron-electron interaction. 52 pp. Englisch.
Von Händler/Antiquariat, Agrios-Buch [57449362], Bergisch Gladbach, Germany.
Neuware - We present the findings of the 0.7 (2e2/h) feature in the hole quantum conductance staircase that is caused by one-dimensional channels prepared by the split-gate method as well as by the gate voltage applied to the edge channels inside the silicon nanosandwich structure. The interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction (SOI) is shown to result in the formation of the 0.7 (2e2/h) feature that is found to take in the fractional form with both the plateaux and steps as a function of the magnetic field and the gate voltage. The creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels appears to reveal new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of the p-type silicon nanosandwiches because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron-electron interaction. 52 pp. Englisch.
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Symbolbild
Quantum conductance staircase in silicon nanosandwiches
DE PB NWISBN: 9783659819308 bzw. 3659819301, in Deutsch, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, European-Media-Service Mannheim [1048135], Mannheim, Germany.
Publisher/Verlag: LAP Lambert Academic Publishing | We present the findings of the 0.7 (2e2/h) feature in the hole quantum conductance staircase that is caused by one-dimensional channels prepared by the split-gate method as well as by the gate voltage applied to the edge channels inside the silicon nanosandwich structure. The interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction (SOI) is shown to result in the formation of the 0.7 (2e2/h) feature that is found to take in the fractional form with both the plateaux and steps as a function of the magnetic field and the gate voltage. The creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels appears to reveal new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of the p-type silicon nanosandwiches because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron-electron interaction. | Format: Paperback | Language/Sprache: english | 52 pp.
Von Händler/Antiquariat, European-Media-Service Mannheim [1048135], Mannheim, Germany.
Publisher/Verlag: LAP Lambert Academic Publishing | We present the findings of the 0.7 (2e2/h) feature in the hole quantum conductance staircase that is caused by one-dimensional channels prepared by the split-gate method as well as by the gate voltage applied to the edge channels inside the silicon nanosandwich structure. The interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction (SOI) is shown to result in the formation of the 0.7 (2e2/h) feature that is found to take in the fractional form with both the plateaux and steps as a function of the magnetic field and the gate voltage. The creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels appears to reveal new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of the p-type silicon nanosandwiches because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron-electron interaction. | Format: Paperback | Language/Sprache: english | 52 pp.
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Symbolbild
Quantum conductance staircase in silicon nanosandwiches
DE PB NWISBN: 9783659819308 bzw. 3659819301, in Deutsch, 52 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkosten nach: Deutschland.
Von Händler/Antiquariat, Rheinberg-Buch, [3813847].
Neuware - We present the findings of the 0.7 (2e2/h) feature in the hole quantum conductance staircase that is caused by one-dimensional channels prepared by the split-gate method as well as by the gate voltage applied to the edge channels inside the silicon nanosandwich structure. The interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction (SOI) is shown to result in the formation of the 0.7 (2e2/h) feature that is found to take in the fractional form with both the plateaux and steps as a function of the magnetic field and the gate voltage. The creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels appears to reveal new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of the p-type silicon nanosandwiches because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron-electron interaction. Taschenbuch, Neuware, 220x150x mm, 52, Internationaler Versand, PayPal, offene Rechnung, Banküberweisung, sofortueberweisung.de.
Von Händler/Antiquariat, Rheinberg-Buch, [3813847].
Neuware - We present the findings of the 0.7 (2e2/h) feature in the hole quantum conductance staircase that is caused by one-dimensional channels prepared by the split-gate method as well as by the gate voltage applied to the edge channels inside the silicon nanosandwich structure. The interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction (SOI) is shown to result in the formation of the 0.7 (2e2/h) feature that is found to take in the fractional form with both the plateaux and steps as a function of the magnetic field and the gate voltage. The creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels appears to reveal new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of the p-type silicon nanosandwiches because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron-electron interaction. Taschenbuch, Neuware, 220x150x mm, 52, Internationaler Versand, PayPal, offene Rechnung, Banküberweisung, sofortueberweisung.de.
4
Symbolbild
Quantum conductance staircase in silicon nanosandwiches
DE PB NWISBN: 9783659819308 bzw. 3659819301, in Deutsch, 52 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Buchhandlung - Bides GbR, [4124740].
Neuware - We present the findings of the 0.7 (2e2/h) feature in the hole quantum conductance staircase that is caused by one-dimensional channels prepared by the split-gate method as well as by the gate voltage applied to the edge channels inside the silicon nanosandwich structure. The interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction (SOI) is shown to result in the formation of the 0.7 (2e2/h) feature that is found to take in the fractional form with both the plateaux and steps as a function of the magnetic field and the gate voltage. The creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels appears to reveal new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of the p-type silicon nanosandwiches because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron-electron interaction. Taschenbuch, Neuware, 220x150x mm, 52, Internationaler Versand, offene Rechnung (Vorkasse vorbehalten), PayPal, Kreditkarte, Banküberweisung.
Von Händler/Antiquariat, Buchhandlung - Bides GbR, [4124740].
Neuware - We present the findings of the 0.7 (2e2/h) feature in the hole quantum conductance staircase that is caused by one-dimensional channels prepared by the split-gate method as well as by the gate voltage applied to the edge channels inside the silicon nanosandwich structure. The interplay of the spontaneous spin polarisation and the Rashba spin-orbit interaction (SOI) is shown to result in the formation of the 0.7 (2e2/h) feature that is found to take in the fractional form with both the plateaux and steps as a function of the magnetic field and the gate voltage. The creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels appears to reveal new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of the p-type silicon nanosandwiches because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron-electron interaction. Taschenbuch, Neuware, 220x150x mm, 52, Internationaler Versand, offene Rechnung (Vorkasse vorbehalten), PayPal, Kreditkarte, Banküberweisung.
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Quantum conductance staircase in silicon nanosandwiches (2017)
EN PB NWISBN: 9783659819308 bzw. 3659819301, in Englisch, 52 Seiten, LAP LAMBERT Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei.
Von Händler/Antiquariat, expressbuch24.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, expressbuch24.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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