Swift Heavy Ion induced effects in III-V compound semiconductors
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Bester Preis: € 50,66 (vom 05.01.2023)1
Swift Heavy Ion induced effects in III-V compound semiconductors
DE PB NW RPISBN: 9783659854774 bzw. 3659854778, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed. 156 pp. Englisch.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed. 156 pp. Englisch.
2
Swift Heavy Ion induced effects in III-V compound semiconductors: Ion beam modification studies of GaAs and GaN semiconductors (2016)
DE PB NW RPISBN: 9783659854774 bzw. 3659854778, in Deutsch, Lap Lambert Academic Publishing, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, English-Book-Service Mannheim [1048135], Mannheim, Germany.
This item is printed on demand for shipment within 3 working days.
Von Händler/Antiquariat, English-Book-Service Mannheim [1048135], Mannheim, Germany.
This item is printed on demand for shipment within 3 working days.
3
Swift Heavy Ion induced effects in III-V compound semiconductors (2016)
~EN PB NW RPISBN: 9783659854774 bzw. 3659854778, vermutlich in Englisch, LAP LAMBERT Academic Publishing, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, moluna [73551232], Greven, Germany.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, moluna [73551232], Greven, Germany.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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