Electrical and switching behavior of quaternary defect chalcopyrite
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Electrical and switching behavior of quaternary defect chalcopyrite
DE PB NW RPISBN: 9783659892608 bzw. 3659892602, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. 56 pp. Englisch.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. 56 pp. Englisch.
2
Electrical and switching behavior of quaternary defect chalcopyrite
~EN NW ABISBN: 9783659892608 bzw. 3659892602, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Niederlande, Lieferzeit: 5 Tage, zzgl. Versandkosten.
Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model.
Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model.
3
Electrical and switching behavior of quaternary defect chalcopyrite
DE HC NWISBN: 9783659892608 bzw. 3659892602, in Deutsch, Lap Lambert Academic Publishing, gebundenes Buch, neu.
Lieferung aus: Deutschland, Versandkostenfrei innerhalb von Deutschland.
Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. Lieferzeit 1-2 Werktage.
Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. Lieferzeit 1-2 Werktage.
4
Electrical and switching behavior of quaternary defect chalcopyrite
~EN PB NWISBN: 9783659892608 bzw. 3659892602, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Electrical and switching behavior of quaternary defect chalcopyrite: Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. Englisch, Taschenbuch.
Electrical and switching behavior of quaternary defect chalcopyrite: Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. Englisch, Taschenbuch.
5
Electrical and switching behavior of quaternary defect chalcopyrite (2016)
EN PB NWISBN: 9783659892608 bzw. 3659892602, in Englisch, 56 Seiten, LAP LAMBERT Academic Publishing, Taschenbuch, neu.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Usually dispatched within 2 days.
Von Händler/Antiquariat, Amazon.co.uk.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, Amazon.co.uk.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
6
Electrical and switching behavior of quaternary defect chalcopyrite (2016)
EN PB NWISBN: 9783659892608 bzw. 3659892602, in Englisch, 56 Seiten, LAP LAMBERT Academic Publishing, Taschenbuch, neu.
Lieferung aus: Kanada, Usually ships in 7 days.
Von Händler/Antiquariat, Amazon.ca.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, Amazon.ca.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
7
Electrical and switching behavior of quaternary defect chalcopyrite
~EN PB NWISBN: 3659892602 bzw. 9783659892608, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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